![]() ![]() Reducing the impact of the traps on the carrier flowing inside the channel by burying the channel can also achieve a reduction of the noise level, but unfortunately at the cost of a degradation of the electrical performances. Furthermore, new plasma processes having the advantages to work at low electron temperature can achieve a further reduction, thanks to the fabrication of a better gate oxide and to a reduction of damages generally induced by conventional plasma processes. It is demonstrated that low‐resistivity source and drain electrodes can greatly lower the low‐frequency noise level by suppressing their contribution to the total noise. The chapter is intended to provide the reader with means to reduce low‐frequency noise in Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). ![]()
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